دیتاشیت BUT12AI,127
مشخصات دیتاشیت
نام دیتاشیت |
BUT12AI
|
حجم فایل |
54.007
کیلوبایت
|
نوع فایل |
pdf
|
تعداد صفحات |
7
|
مشخصات
-
Manufacturer:
NXP USA Inc.
-
Series:
-
-
Packaging:
Tube
-
Part Status:
Obsolete
-
Transistor Type:
NPN
-
Current - Collector (Ic) (Max):
8A
-
Voltage - Collector Emitter Breakdown (Max):
450V
-
Vce Saturation (Max) @ Ib, Ic:
1.5V @ 860mA, 5A
-
Current - Collector Cutoff (Max):
1mA
-
DC Current Gain (hFE) (Min) @ Ic, Vce:
14 @ 1A, 5V
-
Power - Max:
110W
-
Frequency - Transition:
-
-
Operating Temperature:
150°C (TJ)
-
Mounting Type:
Through Hole
-
Package / Case:
TO-220-3
-
Supplier Device Package:
TO-220AB
-
Base Part Number:
BUT12
-
detail:
Bipolar (BJT) Transistor NPN 450V 8A 110W Through Hole TO-220AB